Semiconductor device with lower capacitor electrode that...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S769000, C257SE29343

Reexamination Certificate

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07812425

ABSTRACT:
A semiconductor device has a semiconductor substrate, and a capacitor which is provided on the upper side of the semiconductor substrate and composed of a lower electrode, an upper electrode and a dielectric film, the dielectric film being placed in between the lower electrode and the upper electrode, the lower electrode including a noble metal film, and a plurality of conductive oxide films formed in an islands arrangement on the noble metal film.

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patent: 6624458 (2003-09-01), Takamatsu et al.
patent: 6649954 (2003-11-01), Cross
patent: 6740533 (2004-05-01), Takamatsu et al.
patent: 6773979 (2004-08-01), Okuno et al.
patent: 7200907 (2007-04-01), Takakuwa et al.
patent: 7251117 (2007-07-01), Baniecki et al.
patent: 7273791 (2007-09-01), Basceri et al.
patent: 7297999 (2007-11-01), Wang
patent: 2002/0179947 (2002-12-01), Nasu et al.
patent: 2006/0231880 (2006-10-01), Yamakawa et al.
patent: 2007/0228431 (2007-10-01), Wang

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