Semiconductor device with low on-voltage and large controllable

Details Semiconductor device with low on-voltage and large controllable Semiconductor device with low on-voltage and large controllable

1994-03-22

1995-01-03

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257132, 257137, 257146, 257155, 257163, 257167, 257172, H01L 2974, H01L 2702

Patent

active

053789032

ABSTRACT:
The semiconductor device is formed of an EST part and an IGBT part, wherein the EST part has a first MOSFET and a second MOSFET synchronously switching, and the IGBT part has a third MOSFET controllable independently from them. At a turn-off of the semiconductor device, when turning off the first and second MOSFETs while keeping the third MOSFET at an on-state, IGBT operation remains. Thus, the current path which tends to flow to an emitter region changes toward an emitter electrode side even if the recovery of the potential barrier is late due to the junction in the emitter region, and the charge accumulation to the emitter region is restrained. After the potential barrier is recovered, the third MOSFET is turned off. Controllable turn-off current can be enlarged and turn-off time can be shortened.

REFERENCES:
patent: 4604638 (1986-08-01), Matsuda
patent: 5319221 (1993-06-01), Ueno
Seiji Momota et al., Double gata MOS device Having IGBT and MCT performances.
M. Nandakumar et al., Fast switching power MOS-gated (EST and BRT) thyristors.

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