Semiconductor device with loop line pattern structure,...

Details Semiconductor device with loop line pattern structure,... Semiconductor device with loop line pattern structure,...

2004-10-05

2008-07-22

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07402364

ABSTRACT:
An alternating phase shift mask with dark loops thereon, a memory array fabricated with the alternating phase shift mask, and a method of fabricating the memory. The dark loops in the mask always separate first regions with 180° phase difference from second regions with 0° phase difference to define active areas or gate-lines in a DRAM chip. By using the alternating phase shift mask to pattern gate-lines or active areas in a DRAM array, no unwanted image is created in the DRAM array and only one exposure is needed to achieve high resolution requirement.

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patent: 2002/0196629 (2002-12-01), Terashi
patent: 11017146 (1999-01-01), None

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