Semiconductor device with latch-up prevention structure

Details Semiconductor device with latch-up prevention structure Semiconductor device with latch-up prevention structure

1989-01-26

1992-06-16

Jackson, Jr., Jerome

357 2313, 357 13, H01L 2702

Patent

active

051228556

ABSTRACT:
A semiconductor device comprises first and second island regions of a first conductivity type formed closely to each other in the surface area of a semiconductor substrate, first-and second-channel type MOS FETs formed in the first island region, and a high impurity concentration region of the first conductivity type having an impurity concentration higher than the island regions and formed between the substrate and at least one of the first and second island regions, the high impurity concentration region being formed to surround the island regions.

REFERENCES:
patent: 3667009 (1972-05-01), Rugg
patent: 4327368 (1982-04-01), Uchida
patent: 4476476 (1984-10-01), Yu et al.
patent: 4593458 (1986-06-01), Adler
patent: 4616243 (1986-10-01), Minato et al.
patent: 4626882 (1986-12-01), Cottrell et al.

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