Semiconductor device with laminated refractory metal schottky ba

Details Semiconductor device with laminated refractory metal schottky ba Semiconductor device with laminated refractory metal schottky ba

1995-12-04

1997-05-20

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257281, 257284, 257745, 257750, 257757, H01L 2980, H01L 31112

Patent

active

056314795

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a surface; an active layer of a compound semiconductor disposed at the surface of the semiconductor substrate; and a Schottky barrier gate electrode including a multi-layer film alternately laminating a conductive refractory metal compound layer including a first refractory metal (M.sub.1) and a second refractory metal (M.sub.2) layer to three or more layers respectively, disposed on the active layer, thereby forming a Schottky junction with the active layer. The gate resistance of the Schottky barrier gate electrode can be held low and the internal stress can be reduced, whereby peeling off of the can be suppressed.

REFERENCES:
patent: 4179533 (1979-12-01), Christou et al.

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