Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-08-16
2011-08-16
Nguyen, Thinh T (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S436000, C438S437000, C438S424000, C257S510000, C257SE21546
Reexamination Certificate
active
07998832
ABSTRACT:
A method of manufacturing a semiconductor device is provided herein, where the width effect is reduced in the resulting semiconductor device. The method involves providing a substrate having semiconductor material, forming an isolation trench in the semiconductor material, and lining the isolation trench with a liner material that substantially inhibits formation of high-k material thereon. The lined trench is then filled with an insulating material. Thereafter, a layer of high-k gate material is formed over at least a portion of the insulating material and over at least a portion of the semiconductor material. The liner material divides the layer of high-k gate material, which prevents the migration of oxygen over the active region of the semiconductor material.
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International Search Report for PCT/US2009/053271 mailed Nov. 2, 2009.
Carter Richard J.
Hargrove Michael J.
Kluth George J.
Advanced Micro Devices , Inc.
Ingrassia Fisher & Lorenz P.C.
Nguyen Thinh T
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