Semiconductor device with isolating groove containing single cry

Details Semiconductor device with isolating groove containing single cry Semiconductor device with isolating groove containing single cry

1991-05-29

1993-04-06

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257448, 257514, 257622, H01L 2906, H01L 2704, H01L 2710

Patent

active

052006395

ABSTRACT:
A semiconductor device has a device region, and a device separation region formed on a semiconductor substrate doped with impurities. And, the device separation region has a metal wiring formed on the surface of the device region or the back surface of the substrate. An aluminum region extending in the longitudinal direction connected to the metal wiring is formed within the device separation region.

REFERENCES:
patent: 4044452 (1977-08-01), Abbas et al.
patent: 4472728 (1984-09-01), Grant et al.
patent: 4977439 (1990-12-01), Esquivel et al.
patent: 5051792 (1991-09-01), Sands
S. Magdo, "Pyramid Shaped Electrical Feedthrough in Silicon Wafers," IBM Technical Disclosure Bulletin, vol. 19, No. 4, Sep. 1976, pp. 12-32-1233.
Patent Abstracts of Japan, vol. 012, No. 420 (E-679) Nov. 8, 1988, & JP-A-63 156 373 (Matsushita) Jun. 29, 1988.
Patent Abstracts of Japan, vol. 013, No. 230 (E-764) May 26, 1989, & JP-A-1 037 051 (NEC Corp.), Feb. 7, 1989.

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