Semiconductor device with isolated circuit elements and method o

Details Semiconductor device with isolated circuit elements and method o Semiconductor device with isolated circuit elements and method o

1975-01-09

1977-01-25

Wojciechowicz, Edward J.

357 50, 357 52, 357 55, 357 89, H01L 2712, H01L 2704, H01L 2934, H01L 2906

Patent

active

040054535

ABSTRACT:
A semiconductor device having a region of a first conductivity type, a semiconductor layer present thereon, a buried layer of the second conductivity type provided locally between the said layer and the region, a buried layer of the first conductivity type provided on said buried layer and an inset pattern of an insulating material which adjoins the buried layer of the second conductivity type and surrounds two islands of the semiconductor layer connected by the buried layer of the first conductivity type in one of which a semiconductor circuit element is provided which is contacted via the other island. Suited in particular for integration of insulated complementary transistor pairs.

REFERENCES:
patent: 3961356 (1976-06-01), Kooi

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