Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1992-03-13
1993-08-17
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257758, 257797, 257503, H01L 2710, H01L 2702, H01L 2712, H01L 2934
Patent
active
052371999
ABSTRACT:
A semiconductor device wafer in which the interlayer insulating film between wirings and the passivation film formed during the manufacturing process are left on the entire surface of the scribe line area during dicing. The interlayer insulating film between wirings and the passivation film formed during the manufacturing process may be left on most of the scribe line area, in which case a slit groove is provided along the periphery of a chip and the passivation film is removed at the location of the slit groove. Alternatively, the passivation film formed during the manufacturing process may be left on a part of the scribe line area where a film structure is provided. In this case, a slit groove is provided along the periphery of a chip and the passivation film is removed at the location of the slit groove in the same way as mentioned above on the part of the scribe line in which there is a film structure such as an alignment mark, while most of the passivation film on the scribe lines is removed in the area in which there is no film structure.
Hille Rolf
Saadat Mahshid
Seiko Epson Corporation
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