Semiconductor device with interfacial electrode layer

Details Semiconductor device with interfacial electrode layer Semiconductor device with interfacial electrode layer

1991-07-08

1992-04-07

LaRoche, Eugene R.

357 67, 357 71, 357 68, H01L 2712

Patent

active

051032686

ABSTRACT:
A semiconductor device having a thin film silicon-containing active layer and a metallic first electrode is provided with an interfacial metallic layer at an inner surface of a second electrode to increase electrical resistance and thereby reduce shunts adjacent pinhole-type defects of the active layer. The interfacial layer is preferably made of a metal selected from the group consisting of tin, gold, titanium, palladium and tantalum.

REFERENCES:
patent: 4517403 (1985-05-01), Morel et al.
patent: 4542578 (1985-09-01), Yamano et al.

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