Semiconductor device with interdigitated electrodes

Details Semiconductor device with interdigitated electrodes Semiconductor device with interdigitated electrodes

1984-07-26

1986-08-12

James, Andrew J.

357 68, 357 65, H01L 2348

Patent

active

046059490

ABSTRACT:
A semiconductor device, such as a gate turn-off thyristor, has, at a major surface of a semiconductor body a plurality of electrode fingers alternately contacting opposite conductivity type regions (e.g. the cathode and gate) of the semiconductor body. In order to save useful semiconductor area and to allow an improved electrode geometry bonding pads for the electrodes are formed at a level above the electrodes. An insulating layer separates the bonding pads and the electrodes. A first bonding pad contacts a first set of electrode fingers through a first set of windows in the insulating layer and a second bonding pad contacts a second set of electrode fingers through a second set of windows. In operation, the voltage drop along each electrode finger of a set is substantially equal. A third bonding pad may also contact the second electrode set through a third set of windows in the insulating layer.

REFERENCES:
patent: 3525910 (1970-08-01), Philips
patent: 3619738 (1971-11-01), Otsuka
patent: 3969745 (1976-07-01), Blocker

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