Semiconductor device with integrated RC network and Schottky dio

Details Semiconductor device with integrated RC network and Schottky dio Semiconductor device with integrated RC network and Schottky dio

1993-03-03

1994-10-11

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257535, 257537, 257476, 437 60, 437918, 437919, H01L 2706, H01L 2908, H01L 2948

Patent

active

053550145

ABSTRACT:
A semiconductor device which has a resistor, a capacitor, and a Schottky diode all formed on a single semiconductor substrate. The capacitor comprises a dielectric region between two metal regions. The resistor comprises an N.sup.+ -type well. The Schottky diode comprises an N-type tub, a metal region in contact with the tub, and an N.sup.+ -type region formed in the N-type tub. The resistor and capacitor are coupled by a metal region which contacts one of the metal regions of the capacitor and the N.sup.+ -type well of the resistor. The resistor and Schottky diode are coupled by a metal region which contacts the N.sup.+ -type well of the resistor and the N.sup.+ -type well of the Schottky diode.

REFERENCES:
patent: 4170017 (1979-10-01), Klein et al.
patent: 5047826 (1991-09-01), Keller et al.
patent: 5218222 (1993-06-01), Roberts
patent: 5227012 (1993-07-01), Brandli et al.

Affiliated with

Also associated with

Rating

Semiconductor device with integrated RC network and Schottky dio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with integrated RC network and Schottky dio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with integrated RC network and Schottky dio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1660909