Semiconductor device with integral decoupling capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257672, 257700, 361306, 437206, 437211, 437919, H01L 2348, H01L 2160, H01G 114

Patent

active

052124029

ABSTRACT:
A semiconductor device (10) has a decoupling capacitor (55) which is formed of a ground paddle (37), a dielectric element (57), and a power paddle (23). The power paddle is formed as a conductive element of a first TAB leadframe (12) and is contiguous with power leads (19). The first TAB leadframe also includes signal leads (16). The ground paddle is formed as a conductive element of a second TAB leadframe (14) and is contiguous with ground leads (36). The two leadframes are superimposed with one another to form the decoupling capacitor and to intersperse the ground leads with the power and signal leads. In one embodiment of the invention, power paddle (23) is raised above the leads to accommodate the dielectric element. The invention permits all power and all ground leads to be electrically coupled to the decoupling capacitor while keeping the decoupling capacitor very close to a semiconductor die (38).

REFERENCES:
patent: 4903113 (1990-02-01), Frankeny et al.
patent: 4994936 (1991-02-01), Hernandez

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