Semiconductor device with InGaP channel layer

Details Semiconductor device with InGaP channel layer Semiconductor device with InGaP channel layer

1997-09-15

1999-08-31

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257201, 257280, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

059456957

ABSTRACT:
A semiconductor device comprises a GaAs substrate 10; a buffer layer 12 formed on the GaAs substrate 10 and having a wider band gap than that of InGaP; a channel layer 14 formed on the buffer layer 12 and formed of an InGaP; a gate electrode 34 for controlling current of the channel layer 14. InGaP has a high carrier mobility and large .GAMMA.-L energy difference. Accordingly, the channel layer is formed of InGaP, whereby the semiconductor device which is operable at high speed and high voltage can be obtained.

REFERENCES:
patent: 5448086 (1995-09-01), Hida
patent: 5504353 (1996-04-01), Kuzuhara
patent: 5682040 (1997-10-01), Imanishi
patent: 5698868 (1997-12-01), Awano et al.
patent: 5751028 (1998-05-01), Kikkawa
patent: 5760427 (1998-06-01), Onda
"High Breakdown-Voltage Ga.sub.0.51 In.sub.0.49 P Channel MESFET's Grown by GSMBE", Yo-Sheng Lin and Shey-Shi Lu; IEE Electron Device Letters, vol. 17, No. 9, Sep. 1996.

Affiliated with

Also associated with

Rating

Semiconductor device with InGaP channel layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with InGaP channel layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with InGaP channel layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2427030