Semiconductor device with independent over-current and short-cir

Details Semiconductor device with independent over-current and short-cir Semiconductor device with independent over-current and short-cir

1993-11-23

1995-03-07

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327434, 327577, 327 50, 327479, H03K 17687, H03K 326

Patent

active

053961170

ABSTRACT:
By disposing various current-sensing layers on a semiconductor element with a current-sensing function, wherein signals corresponding to the sensing currents derived from each current-sensing electrode are inputted independently into said over-current control circuit and short-circuit control circuit in a control circuit for said semiconductor element; or by constructing the current-sensing resistor in said control circuit with various resistors connected in series, wherein a single sensing current flows into this resistor to generate various detection voltages divided by the resistor, while detection voltages with different values are inputted independently into said main current turn-off command circuit and main current control circuit the value I.sub.oc of the over-current detection level for the semiconductor element with a current-sensing function and the value I.sub.sct at the short-circuit current detection level can be set independently of each other. Therefore, while increasing I.sub.oc, setting I.sub.sct within a short-circuit current withstand capacity of the semiconductor element, and extending the upper limit in the main current of said semiconductor element, it is possible to avoid element break-down due to a short-circuit current.

REFERENCES:
patent: 4155014 (1979-05-01), Tung
patent: 4577125 (1986-03-01), Allen
patent: 5061863 (1991-10-01), Mori et al.
patent: 5091664 (1992-02-01), Furuhata

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