Semiconductor device with increased distance between channel edg

Details Semiconductor device with increased distance between channel edg Semiconductor device with increased distance between channel edg

1996-03-28

1998-05-05

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 72, 257347, 257354, 257356, 257401, 257773, H01L 2976

Patent

active

057478287

ABSTRACT:
The semiconductor device of this invention includes a substrate having an insulating surface and a thin film transistor formed on the substrate, wherein the thin film transistor has a semiconductor island including a channel region and source/drain regions, a gate insulating film formed on the semiconductor island and a gate electrode covering the channel region of the semiconductor island interposing the gate insulating film therebetween, and wherein a distance between an edge of the channel region of the semiconductor island and the gate electrode is larger then a distance between a central portion of the channel region of the semiconductor island and the gate electrode.

REFERENCES:
patent: 4242156 (1980-12-01), Peel
patent: 4822751 (1989-04-01), Ishizu et al.
patent: 5128733 (1992-07-01), Tyson
patent: 5130264 (1992-07-01), Troxell et al.
patent: 5419876 (1995-05-01), Usui et al.
patent: 5561075 (1996-10-01), Nakazawa
patent: 5567967 (1996-10-01), Kusumoto
patent: 5569935 (1996-10-01), Takemura et al.

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