Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1993-10-26
1996-02-27
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257369, 257409, 257545, H01L 2936
Patent
active
054951240
ABSTRACT:
A low concentration impurity region 6 of a second conductivity type is formed to cover lower portion of a high concentration impurity region 8 of the second conductivity type. Consequently, impurity concentration gradient between the high concentration impurity region 8 of the second conductivity type and the low concentration impurity layer 2 of a first conductivity type can be made moderate to relax the electric field, which leads to provision of higher breakdown voltage of the semiconductor device. Further, the depth of impurity diffusion of the low concentration impurity region 6 of the second conductivity type from the main surface of the low concentration impurity layer 2 of the first conductivity type is made at least three times the depth of impurity diffusion of the high concentration impurity region 8 of the second conductivity type from the main surface of the low concentration impurity layer 2 of the first conductivity type. Therefore, minimum dimensions necessary for suppressing the electric field can be set in the semiconductor device, and therefore the semiconductor device comes to have higher breakdown voltage efficiently while not preventing miniaturization.
REFERENCES:
patent: 3460006 (1969-08-01), Strull
patent: 3622842 (1971-11-01), Oberai
patent: 5218228 (1993-06-01), Williams et al.
Terashima et al., "Development of Structure of 600V HIVC", published Oct. 29, 1992.
Proceedings of The 5th International Symposium on Power Semiconductor Devices and ICs, ISPSD '93, published May 18, 1993.
Bowers Courtney A.
Crane Sara W.
Mitsubishi Denki & Kabushiki Kaisha
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