Semiconductor device with impurity layer to prevent...

Details Semiconductor device with impurity layer to prevent... Semiconductor device with impurity layer to prevent...

2006-02-28

2006-02-28

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S213000, C257S256000

Reexamination Certificate

active

07005688

ABSTRACT:
A semiconductor switching device includes a plurality of metal layers. At least one of the metal layers forming a Schottky junction with a semi-insulating substrate or an insulating layer on a substrate. The device also includes an impurity diffusion region, and a high-concentration impurity region formed between two of the metal layers or between one of the metal layers and the impurity diffusion region so as to suppress expansion of a depletion layer from the corresponding metal layer.

REFERENCES:
patent: 4607270 (1986-08-01), Iesaka
patent: 5439849 (1995-08-01), McBride et al.
patent: 6580107 (2003-06-01), Asano et al.
A.O. Adan, M. Fukumi, K. Higashi, T. Suyama, M. Miyamoto, M. Hayashi, Electromagnetic Coupling Effects in RFCMOS Circuits, IEEE Radio Frequency Integrated Circuits Symposium, 2002, IC Development Group, SHARP Corp., Advance Research Labs., SHARP Corp.

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