Semiconductor device with improved turn-off capability

Details Semiconductor device with improved turn-off capability Semiconductor device with improved turn-off capability

1994-07-15

1998-05-26

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257152, H01L 2974, H01L 31111

Patent

active

057570361

ABSTRACT:
A four-region semiconductor device (that is, a p-n-p-n or n-p-n-p device) including at least one further region utilizes integral FET structure for diverting carriers away from an interior region of the device and shunting them to a main current-carrying electrode of the device, whereby the device is provided with a turn-off capability. The device requires only a small amount of energy for its turn-off control gate, and utilizes a high percentage of its semiconductor body for carrying current through the device. High speed turn-off is achieved in a particular embodiment of the device.

REFERENCES:
patent: 5350935 (1994-09-01), Temple

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