Semiconductor device with improved isolation between trench capa

Details Semiconductor device with improved isolation between trench capa Semiconductor device with improved isolation between trench capa

1988-10-12

1990-04-17

James, Andrew J.

357 49, 357 54, 357 55, H01L 2100

Patent

active

049184997

ABSTRACT:
A semiconductor device includes trench capacitors formed in a semiconductor substrate, a trench provided therebetween for isolating the trench capacitors, and a trench capacitor formed in a side wall of the trench for isolating the trench capacitors.

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