Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – In compound semiconductor material
Patent
1995-11-13
1996-07-23
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
In compound semiconductor material
257289, 257192, 257632, H01L 2904, H01L 2916
Patent
active
055392482
ABSTRACT:
A semiconductor device with an improved insulating and passivating layer including the steps of providing a gallium arsenide substrate with a surface, and crystallographically lattice matching an insulating and passivating layer of indium gallium fluoride on the surface of the gallium arsenide substrate. In one embodiment the semiconductor device is a FET and the layer of indium gallium fluoride covers at least an inter-channel area surrounding the gate.
REFERENCES:
patent: 4368098 (1983-01-01), Manasevit
patent: 4901326 (1990-02-01), Hayakawa et al.
patent: 5051792 (1991-09-01), Sands
Rigout et al. "Chemical and Physical Compatibilities of Fluoride and Fluorophosphate glasses" {In. J. Non-Cryst. Solids (Netherlands). Ninth International Symposium in Non-Oxide Glasses, Hangzhon, China, 24-28 May 1943} J. Non. Cryst. Solids (Netherlands), vol. 184. pp. 319-323 May 1995, 8 REF.
Abrokwah Jonathan K.
Thompson Danny L.
Wang Zhiguo
Limanek Robert P.
Motorola
Parsons Eugene A.
Williams Alexander Oscar
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