Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1990-04-12
1993-11-09
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257740, 257741, 257767, H02L 2348
Patent
active
052606040
ABSTRACT:
In a semiconductor device, an impurity diffused layer serving as an active region is formed in a predetermined region of the surface of a semiconductor substrate of silicon, an underlayer insulating film is formed on the semiconductor substrate for the purpose of protecting and stabilizing the surface of the semiconductor substrate, and an interconnection electrically connected to the impurity diffused layer through a contact hole and formed on an Al-Si-Sn alloy, an Al-Si-Sb alloy or alloys having Ti added to the respective alloys, so that occurrence of an alloy pit and a silicon nodule is prevented. In addition, a completed protective film is formed on the interconnection and the underlayer insulating film and an aperture in a bonding pad region is formed in a predetermined region of the completed protective film, so that the interconnection and the bonding pad are electrically connected to each other. The proportion of silicon and other materials in the alloy are controlled to simultaneously avoid alloy pit and silicon nodule defects both at the contact hole and throughout the alloy conductor.
REFERENCES:
patent: 3925808 (1975-12-01), Rai-Choudhury
patent: 4110783 (1978-08-01), Onodera et al.
patent: 4289602 (1981-09-01), Sansregret
patent: 4328261 (1982-05-01), Heinecke et al.
patent: 4492812 (1985-01-01), Lindmayer
patent: 4502207 (1985-03-01), Ohshima et al.
patent: 4527184 (1985-07-01), Fischer
patent: 4635091 (1987-01-01), Roger
patent: 4899206 (1990-02-01), Sakurai et al.
R. J. Herdzik et al. "Boron Doped Aluminum Conductive Stripes for Semiconductor Devices", IBM Technical Disclosure Bulletin, vol. 14 (Jun. 1971) p. 260.
F. Mohammadi, "Silicides for interconnection technology," Solid State Technology (Jul. 1981) pp. 65 to 72.
T. Tatsuzawa "SI Nodule Formation in Al-SI Metallization" (1985): 138, 141.
D. Pramanik, et al, "VLSI Metallization Using Aluminum and its Alloys, Part II" Solid State Technology (Mar. 1983): 131, 138.
P. Totta, et al. "SLT Device Metallurgy and Its Monolithic Extension", IBM J. Res. Develop. (May 1969): 226, 238.
Harada Shigeru
Masuda Hisao
Tamaki Reiji
Carroll J.
Mitsubishi Denki & Kabushiki Kaisha
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