Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1992-07-28
1994-06-28
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257592, 257593, 257757, H01L 2122, H01L 27082, H01L 2940
Patent
active
053249844
ABSTRACT:
In an open-hole section formed in a silicon oxide layer, a polycrystalline silicon layer, which will become a lower layer of an emitter electrode, is deposited and arsenic ions are implanted into it. Next, on top of the polycrystalline silicon layer, another polycrystalline silicon layer, which will become an upper layer of the emitter electrode, is deposited and implanted with a high density of arsenic ions. Through heat treatment, an N-type emitter diffusion layer is formed inside a P-type intrinsic base diffusion layer. By constructing the emitter electrode with 2 layers, the lower layer and upper layer, and by optimizing the impurity density in each of the layers, the characteristic irregularities of a bipolar transistor having minute emitter contact holes are reduced, and it is possible to increase the allowance of the formation conditions of the open-hole section which connects a wiring layer and to reduce the emitter resistance.
REFERENCES:
patent: 4795722 (1989-01-01), Welch et al.
"Optimization of Polysilicon Emitters for BiCMOS Transistor Design", IEEE Transactions on Electron Devices, vol. 37, No. 11, Nov. 1990, by I. R. Evans et al., pp. 2343-2349.
"Scaling the Silicon Bipolar Transistor for Sub-100-ps ECL Circuit Operation at Liquid Nitrogen Temperature", by Cressler et al., IEEE Transactions On Electron Devices, vol. 37, No. 3, Mar. 1990, pp. 680-691.
S. M. Sze; "Semiconductor Devices Physics and Technology"; 1985; pp. 109-111.
Fahmy Wael
Hille Rolf
NEC Corporation
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