Semiconductor device with improved contact fuse

Details Semiconductor device with improved contact fuse Semiconductor device with improved contact fuse

2008-07-14

2009-11-03

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C438S668000

Reexamination Certificate

active

07612454

ABSTRACT:
One aspect of the invention provides an integrated circuit(IC) [400b]. The IC comprises transistors [410b] and contact fuses [422b]. The contact fuses each comprise a conducting layer [424b], a frustum-shaped contact [426b] has a narrower end that contacts the conducting layer and a first metal layer [427b] that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink [432b] that is located over and contacts the first metal layer.

REFERENCES:
patent: 6791135 (2004-09-01), Takenaka
patent: 7064369 (2006-06-01), Koh
patent: 7118958 (2006-10-01), Phan et al.
patent: 7205168 (2007-04-01), Oohata et al.
patent: 2006/0049511 (2006-03-01), Schaefer
patent: 2006/0279975 (2006-12-01), Choi
patent: 2007/0246796 (2007-10-01), Guo et al.

Affiliated with

Also associated with

Rating

Semiconductor device with improved contact fuse does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with improved contact fuse, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with improved contact fuse will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4060849