Fishing – trapping – and vermin destroying
Patent
1993-03-25
1994-03-08
Fourson, George
Fishing, trapping, and vermin destroying
437186, 437187, 437180, H01L 2128
Patent
active
052926842
ABSTRACT:
A semiconductor device with an improved contact capable of improving junction breakdown voltage and junction leakage current by forming a contact at an active region without damaging bird's beak portions of its element-isolation oxide films and a method of making this semiconductor device. The semiconductor device comprises element-isolation oxide films formed on a semiconductor substrate, an etch barrier material film formed on bird's beak portions of element-isolation oxide films, an insulating film formed over the element-isolation oxide films and the etch barrier material layer, and a conductive material layer formed over the insulating film and in contact with the active region. In order to prevent the bird's beak portions of element-isolation oxide films from being damaged upon the formation of contact hole, the etch barrier material film has an etch selectivity different from that of a silicon oxide film formed on the active region.
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patent: 5169800 (1992-12-01), Kobayashi
Chung In S.
Kim Youn J.
Fourson George
Hyundai Electronics Industries Co,. Ltd.
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