Semiconductor device with improved adhesion between titanium-bas

Details Semiconductor device with improved adhesion between titanium-bas Semiconductor device with improved adhesion between titanium-bas

1997-11-13

2000-04-04

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257753, 257758, 257763, 257765, H01L 2348

Patent

active

060465026

ABSTRACT:
A semiconductor device includes a substrate, an insulation film formed above the substrate and containing silicon-fluorine bonds, and a titanium-based metal wiring layer formed on the insulation film, the titanium-based metal wiring layer containing fluorine which is diffused from the insulation film and has a fluorine concentration of less than 1.times.10.sup.20 atoms/cm.sup.3.

REFERENCES:
patent: 5334552 (1994-08-01), Homma
International Conference on Solid State Devices and Materials, Aug. 21, 1996, pp. 608-610.
Electrochemical Society, Inc., Journal of the Electrochemical Society, vol. 140, No. 3, Mar. 1993, pp. 687-692.
Institute of Electrical and Electronics Engineers Electron Devices Society, 1994 Symposium on VLSI Technology Digest of Technical Papers, Honolulu, Jun. 7-9, 1994, pp. 59/60.

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