Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Reexamination Certificate
2004-10-07
2008-10-07
Landau, Matthew C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
In integrated structure
C257S471000, C257SE29271, C257SE29338
Reexamination Certificate
active
07432579
ABSTRACT:
A MOS field-effect transistor includes a semiconductor substrate of a first-conductivity type, a semiconductor layer of the first-conductivity type, a source region of a second-conductivity type, a first drain region of the second-conductivity type, a resurf layer of the second-conductivity type provided in the surface of the semiconductor layer between the source region and the first drain region in contact with the first drain region, and having a lower impurity concentration than the first drain region, a gate insulation film, and a gate electrode provided on the gate insulation film between the source region and resurf layer. A Schottky barrier diode includes a second drain region of the second-conductivity type provided in the surface of the semiconductor layer separate from the first drain region in a direction away from the gate electrode, and a Schottky electrode provided on the semiconductor layer between the first and second drain regions.
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Matsudai Tomoko
Nakagawa Akio
Nakamura Kazutoshi
Kabushiki Kaisha Toshiba
Landau Matthew C
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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