Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-12-25
2007-12-25
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S734000, C257S738000, C257S758000, C257S782000, C257S783000, C257S784000, C257S621000, C257S666000, C257S698000, C257S692000, C257S684000, C257S693000, C438S064000, C438S109000
Reexamination Certificate
active
10420943
ABSTRACT:
Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.
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European Search Report EP 03 01 0938.
European Office Action dated Aug. 10, 2005 issued in EP Application No. 030109388.3.
Office Action mailed Apr. 10, 2006, directed to EP Application No. 0301938.3.
Ando Tatsuya
Kitagawa Katsuhiko
Noma Takashi
Okigawa Mitsuru
Otagaki Takayasu
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
Williams Alexander Oscar
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