Semiconductor device with high voltage breakdown resistance

Details Semiconductor device with high voltage breakdown resistance Semiconductor device with high voltage breakdown resistance

1974-11-01

1977-01-11

James, Andrew J.

357 13, 357 20, 357 34, 357 38, H01L 2934

Patent

active

040030725

ABSTRACT:
A semiconductor device including a substrate of semiconductor material having charge carriers of one conductivity type and a main region of opposite conductivity type. A ring of said opposite conductivity type is disposed around the main region and an auxiliary region of said opposite conductivity type is disposed on the opposite surface of the substrate. The said rings and the said auxiliary region are spaced from the main region by distances that permit the depletion region of the main region to reach the ring and the auxiliary region when the main region is reversed biased with respect to the substrate.

REFERENCES:
patent: 3035186 (1962-05-01), Doucette
patent: 3300694 (1967-01-01), Stehney et al.
patent: 3335296 (1967-08-01), Smart
patent: 3391287 (1968-07-01), Kao et al.
patent: 3571674 (1971-03-01), Yu et al.
patent: 3704399 (1972-11-01), Glaise

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