Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Reexamination Certificate
2006-01-10
2006-01-10
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
C257S578000, C257S586000, C257S587000, C438S235000, C438S309000, C438S312000
Reexamination Certificate
active
06984871
ABSTRACT:
A semiconductor device with high structural reliability and low parasitic capacitance is provided. In one example, the semiconductor device has a surface. The semiconductor device comprises a semiconductor region, wherein an emitter region, a base region, and a collector region are laminated from a side near a substrate of the semiconductor region; an insulating protection layer disposed on the surface; and a wiring layer disposed on the surface, the insulating protection layer forming a via hole from the side of the substrate of the semiconductor region, the via hole being formed to allow the wiring layer to make a contact to an electrode of the emitter region from a side of the substrate where the emitter region, the base region, and the collector region are laminated and where the semiconductor region is isolated.
REFERENCES:
patent: 5485025 (1996-01-01), Chau et al.
patent: 5729033 (1998-03-01), Hafizi
patent: 6696711 (2004-02-01), Mochizuki et al.
patent: 62-177966 (1986-01-01), None
patent: 6-5620 (1992-06-01), None
Mochizuki Kazuhiro
Tanoue Tomonori
Yamada Hiroji
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Kang Donghee
Reed Smith LLP
Renesas Technology Corporation
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