Semiconductor device with high structural reliability and...

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure

Reexamination Certificate

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C257S578000, C257S586000, C257S587000, C438S235000, C438S309000, C438S312000

Reexamination Certificate

active

06984871

ABSTRACT:
A semiconductor device with high structural reliability and low parasitic capacitance is provided. In one example, the semiconductor device has a surface. The semiconductor device comprises a semiconductor region, wherein an emitter region, a base region, and a collector region are laminated from a side near a substrate of the semiconductor region; an insulating protection layer disposed on the surface; and a wiring layer disposed on the surface, the insulating protection layer forming a via hole from the side of the substrate of the semiconductor region, the via hole being formed to allow the wiring layer to make a contact to an electrode of the emitter region from a side of the substrate where the emitter region, the base region, and the collector region are laminated and where the semiconductor region is isolated.

REFERENCES:
patent: 5485025 (1996-01-01), Chau et al.
patent: 5729033 (1998-03-01), Hafizi
patent: 6696711 (2004-02-01), Mochizuki et al.
patent: 62-177966 (1986-01-01), None
patent: 6-5620 (1992-06-01), None

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