Semiconductor device with high speed operation and high integrat

Details Semiconductor device with high speed operation and high integrat Semiconductor device with high speed operation and high integrat

1995-12-04

1997-11-25

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257506, 257524, 257305, 257395, H01L 2900, H01L 27108, H01L 2976

Patent

active

056915640

ABSTRACT:
A semiconductor device manufactured by isolating an element by forming an insulating film on the surface of a semiconductor substrate at an element isolation region, selectively forming a resist film at a second region on the surface of the semiconductor substrate by photolithography, high speed operation having priority over high integration in the second region, and selectively implanting impurity ions as a channel stopper in a first region by using the resist film as a mask, high integration having priority over high speed operation in the first region.

REFERENCES:
patent: 4604790 (1986-08-01), Bonn
patent: 5065208 (1991-11-01), Shah et al.
patent: 5107321 (1992-04-01), Ilderem et al.
patent: 5116775 (1992-05-01), Katto et al.
patent: 5119162 (1992-06-01), Todd et al.
patent: 5128274 (1992-07-01), Yabu et al.
patent: 5173438 (1992-12-01), Sandhu
patent: 5428239 (1995-06-01), Okamura et al.
patent: 5510637 (1996-04-01), Hsu et al.
T. Ikeda, et al., "Advanced BiCMOS Technology for HIgh Speed VLSI", IEEE 1986.

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