Semiconductor device with heterojunction

Details Semiconductor device with heterojunction Semiconductor device with heterojunction

2006-06-13

2006-06-13

Dang, Trung (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S077000, C438S270000, C438S285000

Reexamination Certificate

active

07061027

ABSTRACT:
An aspect of the present invention provides a semiconductor device that includes a semiconductor base made of a first semiconductor material of a first conductivity type, a hetero-semiconductor region forming a heterojunction with the semiconductor base and made of a second semiconductor material having a different band gap from the first semiconductor material, a first gate electrode arranged in the vicinity of the heterojunction, a first gate insulating film configured to insulate the first gate electrode from the semiconductor base, a source electrode formed in contact with the hetero-semiconductor region, a drain electrode formed in contact with the semiconductor base, and an electric field extending region partly facing the first gate electrode, the first gate insulating film and hetero-semiconductor region interposed between the electric field extending region and the first gate electrode, the electric field extending region extending a built-in electric field into the hetero-semiconductor region.

REFERENCES:
patent: 2004/0079989 (2004-04-01), Kaneko et al.
patent: 2004/0217358 (2004-11-01), Kaneko
patent: 2005/0133794 (2005-06-01), Hayashi et al.
patent: 2003-218398 (2003-07-01), None

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