Semiconductor device with heterojunction

Details Semiconductor device with heterojunction Semiconductor device with heterojunction

1995-08-29

1997-07-15

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257656, 257 52, 257 53, 136258, H01L 31075

Patent

active

056486758

ABSTRACT:
In the present invention, atoms are implanted into the surface of at least a crystalline silicon semiconductor of one conductivity type in forming a heterojunction, thereby to bring the surface of the crystalline silicon semiconductor into amorphous to form a substantially intrinsic amorphous silicon layer. An amorphous silicon layer or a microcrystalline silicon layer of an opposite conductivity type is deposited on the amorphous silicon layer, whereby a heterojunction interface is formed in a region deeper than a deposition interface.

REFERENCES:
patent: 4946514 (1990-08-01), Nakagawa et al.
patent: 5213628 (1993-05-01), Noguchi et al.
patent: 5371380 (1994-12-01), Saito et al.

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