Semiconductor device with heat sink

Details Semiconductor device with heat sink Semiconductor device with heat sink

2006-05-30

2006-05-30

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S625000, C257S675000, C257S706000, C257S720000

Reexamination Certificate

active

07053426

ABSTRACT:
A semiconductor device includes a glass substrate, a heat sink formed on the glass substrate and a transistor formed on the heat sink. The transistor includes an active layer formed on the heat sink and having a source region, a channel region and a drain region. A gate electrode is placed on the channel region. In addition, the heat sink may operate as additional gate electrode.

REFERENCES:
patent: 5233211 (1993-08-01), Hayashi et al.
patent: 5605847 (1997-02-01), Zhang
patent: 5658806 (1997-08-01), Lin et al.
patent: 11-111998 (1999-04-01), None

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