Semiconductor device with heat dissipation structure

Details Semiconductor device with heat dissipation structure Semiconductor device with heat dissipation structure

1994-02-24

1995-08-01

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257276, 257621, H01L 2940, H01L 2958, H01L 29784

Patent

active

054382122

ABSTRACT:
A semiconductor device includes a heat generating element disposed on a front surface of a semiconductor substrate and a cavity disposed within the semiconductor substrate opposite the heat generating element. In this structure, heat generated by the heat generating element is conducted through the substrate to the cavity, whereby the thermal conductivity of the device is improved. In a method for producing the semiconductor device, portions of the substrate at opposite sides of the heat generating element are selectively etched in a direction perpendicular to the front surface to form first holes (first etching process). Thereafter, the substrate is selectively etched from the front surface to form second holes beneath the respective first holes (second etching process). During the second etching process, the second holes are connected to each other, resulting in the cavity for heat radiation.

REFERENCES:
patent: 3969745 (1976-07-01), Blocker, III

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