Semiconductor device with fuses

Details Semiconductor device with fuses Semiconductor device with fuses

2005-02-22

2005-02-22

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S758000

Reexamination Certificate

active

06858914

ABSTRACT:
A semiconductor device has: a semiconductor substrate having a principal surface; a fuse circuit formed above the principal surface, the fuse circuit having fuse elements each having a predetermined breaking point; a first trench isolation region formed in a surface layer of the semiconductor substrate under the fuse circuit; and a plurality of active region dummies formed through the first trench isolation region in an area excepting a predetermined area around the predetermined breaking point. Although a dummy structure is formed also in a fuse circuit, a breaking margin is prevented from being lowered and a substrate damage is avoided, while surface flatness and line width controllability are ensured.

REFERENCES:
patent: 6261883 (2001-07-01), Koubuchi et al.
patent: 6452284 (2002-09-01), Sheck
patent: 6614120 (2003-09-01), Sato et al.
patent: 6649997 (2003-11-01), Koike
patent: 11-345880 (1999-12-01), None

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