Semiconductor device with fuse and method for fabricating...

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state

Reexamination Certificate

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C438S601000, C257S529000, C257SE21001

Reexamination Certificate

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07923307

ABSTRACT:
A method for fabricating a semiconductor with a fuse includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing the polysilicon hard mask exposed by the first mask pattern to form a portion of the polysilicon hard mask into a polysilicon fuse.

REFERENCES:
patent: 4984054 (1991-01-01), Yamada et al.
patent: 5636172 (1997-06-01), Prall et al.
patent: 6057221 (2000-05-01), Bernstein et al.
patent: 6337507 (2002-01-01), Bohr et al.
patent: 6746947 (2004-06-01), Daubenspeck et al.
patent: 7227238 (2007-06-01), Ito et al.
patent: 2003/0151116 (2003-08-01), Cabral et al.
patent: 2005/0285224 (2005-12-01), Tsutsui
patent: 2008/0185678 (2008-08-01), Kitajima
patent: 2009/0121314 (2009-05-01), Bosholm et al.
patent: 56138947 (1981-10-01), None
patent: 57109191 (1982-07-01), None
patent: 02-0244740 (1990-09-01), None
patent: 02-244740 (1990-09-01), None
patent: 1998-058446 (1998-10-01), None
patent: 1998058446 (1998-10-01), None
patent: 1020000003231 (2000-01-01), None
patent: 1020000026808 (2000-05-01), None
patent: 1020010089386 (2001-06-01), None
patent: 10-2001-0089386 (2001-10-01), None
Korean Notice of Preliminary Rejection for Korean Application No. 10-2007-0138962.

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