Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-11-20
1999-08-03
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 24, 257192, H01L 2906, H01L 310328, H01L 310336
Patent
active
059328894
ABSTRACT:
An undoped Al.sub.0.22 Ga.sub.0.78 As spacer layer having a large forbidden bandgap and an N-Al.sub.0.22 Ga.sub.0.78 As electron-supplying layer having a large forbidden bandgap are formed in order on an undoped GaAs buffer layer having a small forbidden bandgap, and InAs quantum boxes are provided in the Al.sub.0.22 Ga.sub.0.78 As spacer layer. The size of the InAs quantum box is about 150 .ANG. and the height is about 40 .ANG.. When a predetermined drain voltage is applied, electrons are accumulated in the InAs quantum boxes from a channel formed in the vicinity of the interface with the Al.sub.0.22 Ga.sub.0.78 As spacer layer in the GaAs buffer layer. Accordingly, a drain current will not flow almost at all even if a drain voltage is applied.
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53th Annual Device Research Conference Digest, 1995.
Harada Yasoo
Matsumura Kohji
Fahmy Wael
Sanyo Electric Co,. Ltd.
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