Semiconductor device with floating quantum box

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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257 24, 257192, H01L 2906, H01L 310328, H01L 310336

Patent

active

059328894

ABSTRACT:
An undoped Al.sub.0.22 Ga.sub.0.78 As spacer layer having a large forbidden bandgap and an N-Al.sub.0.22 Ga.sub.0.78 As electron-supplying layer having a large forbidden bandgap are formed in order on an undoped GaAs buffer layer having a small forbidden bandgap, and InAs quantum boxes are provided in the Al.sub.0.22 Ga.sub.0.78 As spacer layer. The size of the InAs quantum box is about 150 .ANG. and the height is about 40 .ANG.. When a predetermined drain voltage is applied, electrons are accumulated in the InAs quantum boxes from a channel formed in the vicinity of the interface with the Al.sub.0.22 Ga.sub.0.78 As spacer layer in the GaAs buffer layer. Accordingly, a drain current will not flow almost at all even if a drain voltage is applied.

REFERENCES:
patent: 5198879 (1993-03-01), Ohshima
patent: 5283445 (1994-02-01), Saito
patent: 5313484 (1994-05-01), Arimoto
patent: 5430309 (1995-07-01), Ugajin
patent: 5608231 (1997-03-01), Ugajin et al.
Physics of Semiconductor Devices (Second Edition), S.M. Sze, Bell Laboratories, Inc. (1991).
International Electron Devices Meeting, Technical Digest, Washington, DC, (1993).
53rd Annual Device Research Conference Digest, University of Virginia (1995).
Physics of Semiconductor Devices, 1981.
International Electron Devices meeting 1993.
53th Annual Device Research Conference Digest, 1995.

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