Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-03-20
2007-03-20
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S280000, C257S289000, C257S401000, C257S490000, C257SE29111
Reexamination Certificate
active
11138650
ABSTRACT:
Floating conducting regions at floating potentials are placed on a substrate surface between adjacent conducting regions to which predetermined potentials are applied. This makes it possible to block the spread of a depletion layer to the substrate between the conducting impurity regions. Thus, the leakage of high-frequency signals can be suppressed. In particular, in a case where a floating conducting region is placed between a peripheral impurity region of a common input terminal pad and a resistor in a switch circuit device, it is possible to suppress the leakage of high-frequency signals from an input terminal to control terminals which become high frequency GND and to suppress an increase in insertion loss.
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WordNet 2.0, 2003 Princeton University. (from http://dictionary.reference.com).
Morrison & Foerster / LLP
Ngo Ngan V.
Sanyo Electric Co,. Ltd.
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