Semiconductor device with fixed channel ions

Details Semiconductor device with fixed channel ions Semiconductor device with fixed channel ions

2006-10-05

2008-12-16

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S525000, C438S589000, C438S238000, C257SE21540, C257SE21552, C257SE21661, C257SE21293, C257S321000

Reexamination Certificate

active

07465643

ABSTRACT:
A method for manufacturing a semiconductor device includes subjecting a semiconductor substrate to thermal treatment at a temperature ranging from 770 to 830° C. to fix channel ions then forming a HTO film. The method thereby prevents a threshold voltage of a gate from changing due to diffusion of channel ions.

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Korean Notice of Rejection (translation) for KR application No. 10-2006-0037113 sent Mar. 26, 2007.
Search Report in German.

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