Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1997-03-24
1999-08-10
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257640, 257641, 257649, 438791, H01L 2358
Patent
active
059363002
ABSTRACT:
A pair of source/drain regions are formed on a semiconductor substrate at a predetermined interval. A gate insulator film is formed on the semiconductor substrate between the source/drain regions of the pair. A gate electrode is formed on the gate insulator film. A film for covering the gate electrode and the source/drain regions has a low permeability against water and a hydroxide group, and has a thickness greater than 3 nm and less than 5 nm.
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patent: 5561319 (1996-10-01), Owens et al.
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patent: 5731238 (1998-03-01), Cavins et al.
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"Improvement of Water-Related Hot-Carrier Reliability by Using ECR Plasma-SiO.sub.2 " by Machida et al., "Transactions of Electron Devices," IEEE, vol. 41, No. 5, May 1994, pp. 709-714.
"Improvement of Gate Oxide Reliability with LPCVD-SiN" by Uraoka et al. Shingaku Gihou, SDM 88-42, 1988 pp. 13-18, 1988.
Aoe Hiroyuki
Arimoto Mamoru
Matusita Yosifumi
Nagasawa Hideharu
Nishida Atsuhiro
Mintel William
Sanyo Electric Co,. Ltd.
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