Semiconductor device with field plate and method

Details Semiconductor device with field plate and method Semiconductor device with field plate and method

2011-03-01

2011-03-01

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S151000, C438S296000, C438S454000, C257SE21409, C257SE21540

Reexamination Certificate

active

07897478

ABSTRACT:
A method of making a semiconductor device includes forming shallow trench isolation structures in a semiconductor device layer. The shallow trench isolation structures are U- or O- shaped enclosing field regions formed of the semiconductor device layer which is doped and/or silicided to be conducting. The semiconductor device may include an extended drain region or drift region and a drain region. An insulated gate may be provided over the body region. A source region may be shaped to have a deep source region and a shallow source region. A contact region of the same conductivity type as the body may be provided adjacent to the deep source region. The body extends under the shallow source region to contact the contact region.

REFERENCES:
patent: 4437226 (1984-03-01), Soclof
patent: 5719423 (1998-02-01), Todd et al.
patent: 2005/0167749 (2005-08-01), Disney
patent: 10301939 (2004-09-01), None
patent: 102004014928 (2005-10-01), None
patent: 2003197909 (2003-07-01), None
Ratnam, P. “Novel Silicon-On-Insulator MOSFET for High-Voltage Integrated Circuits” IEE Electronics Letters, vol. 25, No. 8, Apr. 13, 1989, pp. 536-537.

Affiliated with

Also associated with

Rating

Semiconductor device with field plate and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with field plate and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with field plate and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2733219