Semiconductor device with excess current prevention circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Amplitude control

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Details

327328, 327543, H03K 1704, H03K 17687

Patent

active

053878302

ABSTRACT:
A semiconductor device with an excess current prevention circuit includes a bootstrap circuit, a first NMOS transistor, a second NMOS transistor and a constant voltage element. The first NMOS transistor has a drain electrode to receive a power supply potential, a gate electrode to receive an output of the bootstrap circuit, and a source electrode connected to an output terminal to which an output load is connected. The second NMOS transistor has a gate electrode whose potential is held at the power supply potential and a source electrode connected to-the output terminal. The constant-voltage element such as a diode or a Zener diode is connected between the gate electrode of the first NMOS transistor and the drain electrode of the second NMOS transistor. A change in the output voltage of the first NMOS transistor as an output transistor is fed-back to the gate electrode of the first N-channel MOS transistor by the second N-channel MOS transistor, whereby the operation of preventing the excess current is carried out at a high speed.

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