Semiconductor device with electrostatic discharge protection

Details Semiconductor device with electrostatic discharge protection Semiconductor device with electrostatic discharge protection

1984-06-06

1987-09-08

Davie, James W.

357 41, 357 68, H01L 2704, H01L 2978

Patent

active

046927816

ABSTRACT:
An input protection circuit for an MOS device uses a thick-oxide transistor connected as a diode between a metal bonding pad and ground. The channel width of this transistor is chosen to be sufficient to withstand large, short-duration current spikes caused by electrostatic discharge. More important, the spacing between a metal-to-silicon contact to the drain of this transistor and the channel of the transistor (where heat is generated), is chosen to be much larger than usual so the metal of the contact will not be melted by heat propagating along the silicon surface during the current spike due to ESD. This spacing feature also applies to circuits for output pads, or circuits using diode protection devices.

REFERENCES:
patent: 3673427 (1972-06-01), McCoy et al.
patent: 3999213 (1976-12-01), Brandt et al.
patent: 4055444 (1977-10-01), Rao
patent: 4288829 (1981-09-01), Tango
patent: 4342045 (1982-07-01), Kim
patent: 4509067 (1985-04-01), Minami et al.
patent: 4514646 (1985-04-01), Ando et al.

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