Semiconductor device with edge structure

Details Semiconductor device with edge structure Semiconductor device with edge structure

2006-12-26

2006-12-26

Potter, Roy Karl (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S298000

Reexamination Certificate

active

07154177

ABSTRACT:
A semiconductor device has an edge termination region (15) having a plurality of trenches (17). Conductive material (20) and insulating material (19) is formed at the trenches, and surface implants (21) are formed on either side of the trenches. A conductive bridge (23) connects the surface implants (21) to allow equilibrium to be reached in reverse bias.

REFERENCES:
patent: 6452230 (2002-09-01), Boden
patent: 6670650 (2003-12-01), Nemoto et al.
patent: 6855970 (2005-02-01), Hatakeyama et al.
patent: 1 267 415 (2002-12-01), None
patent: WO 02 065552 (2002-08-01), None

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