Semiconductor device with dummy structure

Details Semiconductor device with dummy structure Semiconductor device with dummy structure

2005-06-21

2005-06-21

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S206000, C257S207000, C257S210000, C257S501000, C257S510000, C257S752000, C257S774000, C257S776000

Reexamination Certificate

active

06909189

ABSTRACT:
A semiconductor device having: a semiconductor substrate with an isolation region defining a plurality of active regions; a gate electrode formed above each active region, constituting a semiconductor element; an interlevel insulator covering the gate electrode; local interconnects formed through the interlevel insulator and electrically connected to the semiconductor element; local interconnect dummies formed through the interlevel insulator and electrically separated from the local interconnects; and lower level dummies, each comprising either one of an active region dummy, a laminated dummy of an active region dummy and a gate electrode dummy formed thereon, and a gate electrode dummy formed on the isolation region, wherein each of the local interconnect dummies is not connected to two or more lower level dummies.

REFERENCES:
patent: 6225697 (2001-05-01), Iguchi
patent: 6396123 (2002-05-01), Nagaoka
patent: 3247600 (2001-11-01), None

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