Semiconductor device with dummy pattern within active region...

Details Semiconductor device with dummy pattern within active region... Semiconductor device with dummy pattern within active region...

2008-11-11

2011-11-22

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S202000, C257S355000, C257SE29014

Reexamination Certificate

active

08063412

ABSTRACT:
A semiconductor device includes a semiconductor substrate having an active region, a plurality of gate electrodes formed on the active region with a gate insulating film therebetween, and a dummy pattern formed on the active region in at least a part thereof between the gate electrodes. The dummy pattern is formed so that a spacing between gate electrodes adjacent to each other, and a spacing between the dummy pattern and the gate electrodes adjacent to the dummy pattern, are within predetermined ranges.

REFERENCES:
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Paul Grudowski et al.; 1-D and 2-D Geometry Effects in Uniaxially-Strained Dual Etch Stop Layer Stressor Integrations , 2006.
H. Tsuno et al.; Advanced Analysis and Modeling of MOSFET Characteristic Fluctuation Caused by Layout Variation, 2007.
Japanese Patent Office Action corresponding to Japanese Serial No. 2007-296295 dated Oct. 6, 2009.

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