Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-08-23
2011-08-23
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23010, C257SE21495, C257SE21579, C438S618000, C438S619000, C438S620000, C438S621000, C438S622000, C438S624000, C438S625000, C438S629000, C438S634000, C438S637000, C438S638000, C438S639000, C438S640000, C438S641000, C438S643000, C438S672000, C438S673000, C438S687000
Reexamination Certificate
active
08004087
ABSTRACT:
A multilayered wiring is formed in a prescribed area in an insulating film that is formed on a semiconductor substrate. Dual damascene wiring that is positioned on at least one layer of the multilayered wiring is composed of an alloy having copper as a principal component. The concentration of at least one metallic element contained in the alloy as an added component in vias of the dual damascene wiring is determined according to the differences in the width of the wiring of an upper layer where the vias are connected. Specifically, a larger wiring width in the upper layer corresponds to a higher concentration of at least one metallic element within the connected vias. Accordingly, increases in the resistance of the wiring are minimized, the incidence of stress-induced voids is reduced, and reliability can be improved.
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Amano Mari
Furutake Naoya
Hayashi Yoshihiro
Tada Munehiro
Dulka John P
McGinn IP Law Group PLLC
NEC Corporation
Richards N Drew
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