Semiconductor device with DRAM cell and method of...

Details Semiconductor device with DRAM cell and method of... Semiconductor device with DRAM cell and method of...

2007-09-04

2007-09-04

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S243000, C438S244000, C257S301000, C257SE21396, C257SE27092

Reexamination Certificate

active

11235210

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a trench in a semiconductor substrate, isotropically forming a trench surface insulating film on an inner surface of the trench, the trench surface insulating film including a deep part functioning as a capacitor insulating film, forming a surface layer side insulating film on the inner surface of the trench so that the surface layer side insulating film is continuously rendered thinner from the surface side of the substrate toward the deep side of the trench, and forming an electrode layer inside the surface layer side insulating film and the trench surface insulating film both formed on the inner surface of the trench.

REFERENCES:
patent: 6750111 (2004-06-01), Schrems
patent: 2003-60079 (2003-02-01), None

Affiliated with

Also associated with

Rating

Semiconductor device with DRAM cell and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with DRAM cell and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with DRAM cell and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3756335