Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1996-05-08
1999-01-05
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257588, H01L 2900
Patent
active
058567003
ABSTRACT:
The present invention is directed to a semiconductor device having an ohmic contact to a buried layer. The device includes a device wafer having on its first surface a first dielectric layer and on its second surface a doped epitaxial layer that comprises a dopant having a first polarity. The device also includes a doped first layer that is contiguous to the dielectric layer and comprises a dopant having a first polarity. The semiconductor device of the present invention further comprises a plurality of trenches, each having spaced apart sidewalls and extending from an upper surface of the epitaxial layer through the epitaxial layer to a trench floor. At least a portion of the trenches include a layer of doped semiconductor material disposed on the sidewalls. This layer provides electrical contact between the doped first layer of first polarity and a surface collector region, also of first polarity, of the epitaxial layer. A layer of dielectric material covers the sidewall layer of doped semiconductor material. The invention is further directed to a process for forming the described semiconductor device.
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Harris Corporation
Prenty Mark V.
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